Semiconductor device and method for producing the same

ABSTRACT

An interterminal anti-short-circuiting pattern is formed in an upper metal wire included in a connection terminal  3,  for connecting to external driving LSI and the like, located on the projected portion of a bottom glass substrate  2.  This pattern includes recess  4  and island  5  on which a contact hole  12   a  is formed through a protective insulating film. The protective insulating film has high residence to water penetration. Spread of the corrosion can be shut off by the recess surrounding the island. Short circuit occurrence due to interterminal current leak can be inhibited under high moisture conditions in the semiconductor device used for active matrix display, e.g. LCD panel.

FIELD OF THE INVENTION

[0001] The present invention relates to a semiconductor device such ascolor LCD (Liquid Crystal Display device) and the like in which anactive matrix display unit is employed and a process for the productionthereof, more especially, to an improved semiconductor device in respectof the connection terminal structure of projected wires at the portionconnecting to an external driving circuit.

RELATED ART

[0002] A liquid crystal display device wherein an active matrix displaymethod is adopted can realize displaying full-color images, displayinghigh-contrast images, and displaying detailed images with highresolution.

[0003] In a display device to which an active matrix display method isapplied, matrix electrode and plural of pixel electrodes are formed onthe inner surface of an electrode substrate which faces anotherelectrode substrate. Every pixel electrode has a thin film transistor(TFT) mounted thereon as an active switching element. This TFT operatesin accordance with a matrix formation to switch its corresponding pixelelectrode therethrough.

[0004] In order to operate each of switching elements in accordance withthe matrix formation through TFT, each of these elements is required tobe connected to LSI and the like of an external driving circuit. Eachconnection terminal of wires constituting wiring of the matrix electrodeincluding TFT switching elements and located on a projected portion of aliquid panel substrate is covered with a transparent conductive film ofchemically stable ITO (Indium-Tin-Oxide).

[0005]FIG. 11 shows an exemplary conventional structure of such aconnection terminal as mentioned above. FIG. 12 shows a sidecross-sectional view taken along the line A-A of FIG. 11.

[0006] In the area between the jogged ends of top and bottom glasssubstrates 1, 2 wherein a connection element of a driving LSI isconnected, a transparent conductive film 13 is deposited, and a metalwire 11 is formed therebeneath. In this case, the following problem willarise. Metal of the metal wire is easy to be ionized by water (moisture)penetrating through the transparent conductive film since thetransparent conductive film is porous and less effective to shut off theinfiltration of water under high humidity conditions. Consequently,metal corrosion occurs and the corroded metal leaches out betweenterminals to cause failure of interterminal current leak.

[0007] In order to solve this problem, this applicant (assignee) hasproposed in Japanese Patent Kokai (Laid-open) No. JP-A-8-6059 (1996) anactive matrix substrate in which an upper metal wire is removed of itsterminal portion uncovered with an inorganic protective film or aconnecting material connected to the terminal.

SUMMARY OF THE DISCLOSURE

[0008] However, in the active matrix substrate disclosed above thereremains the following unsolved problem. When corrosion occurs in theportion of the upper metal wire to be connected to a wire of a plasticwire board, failure of interterminal current leak occurs at the sametime. Explaining more in detail, the upper metal wire is generallycovered with an anisotropic conductive film and connected to the wire ofthe flexible wire board via an anisotrapic conductive film by thetape-carrier package method. However, the anisotropic conductive film iswater-absorbable to some extent so that water infiltrated through theanisotropic conductive film reacts with metal of the upper metal wire.In addition, in case that an impurity ion such as chlorine and the likeis attached to either the anosotrapic conductive film or the flexiblewire board, the attached impurity ion reacts with the metal.Consequently, metal corrosion occurs, and the corroded metal leaches outbetween the terminals to cause the failure of the interterminal currentleak.

[0009] Accordingly, an object of the present invention is to provide asemiconductor device, including especially, active matrix liquid crystaldisplay panel and the like, which is capable of inhibiting short circuitoccurrence due to the interterminal current leak even under highhumidity conditions, and a method for producing same.

[0010] According to an aspect of the present invention, there isprovided a semiconductor device comprising plural lines of metal wiresformed on a substrate each having a connection terminal positioned atthe end of the substrate for connecting to an external driving circuitfor applying voltage independently to every pixel electrode. Thesemiconductor device is characterized as follows: Each of the metalwires at the position of the connection terminal is provided with aninterterminal anti-short-circuiting pattern including a conductiveisland and a recessor recesses located around the island; The surface ofthe metal wire except at least a portion of the island but including theinside of the recess thereon is covered with a protective insulatingfilm; A contact hole is formed of the uncovered portion with theprotective insulating film on the island; And a transparent conductivefilm is deposited on the surface of the protective insulating filmincluding the inside of the contact hole and the top face of the island.

[0011] In this case, propagation of corrosion originating from theisland formed on the connection terminal of the metal wire isintercepted by the recess, and accordingly, corrosion can be inhibitedso as not to spread out of the island.

[0012] In an active matrix display method, matrix electrodes, pluralpixel electrodes and active switching elements corresponding one by oneto the pixel electrodes are used in being connected to each of metalelectrodes except the aforementioned connection terminal end. The metalelectrode except the connection terminal end constitutes a displayportion on a substrate. Each of the pixel electrodes can be switchedcorrespondingly to the matrix operation of the active switchingelements. Liquid crystal is put into the space of the electrodes arealocated between the substrate and another substrate bonded opposing eachother.

[0013] This constitution makes it possible to inhibit the occurrence ofthe interterminal current leak by the following reason. In the presentinvention, each of metal wires has an interterminalanti-short-circuiting pattern of conductive island and recess(es) on itsconnection terminal portion. Even though corrosion appears in the islandarea, the propagation of corrosion can be intercepted by the recess(es)located around the island, since the metal wire of a metal film exceptthe island portion is covered with a protective insulating filmeffective to shut off the infiltration of water. Moreover, flow of metaleluted from island can also be stopped in the recess and never reachesoutside. Accordingly, the occurrence of the interterminal current leakcan be inhibited.

[0014] According to a second aspect of the present invention, there isprovided a semiconductor device characterized by the following features.

[0015] Each of the metal wires at the position of said connectionterminal is provided with an interterminal anti-short-circuiting patterncomprising conductive island and recess(es) located around said island;The surface of the metal wire except at least a portion of the islandbut including the inside of said recess(es) thereon are covered with aprotective insulating film; A contact hole is formed of the uncoveredportion with the protective insulating film on the island; A bottomedpool arriving at the recess is provided through the protectiveinsulating film adjacent to said contact hole; A transparent conductivefilm is deposited on the surface of the protective insulating film,including inside of the contact hole and the bottomed pool.

[0016] According to a third aspect of the present invention, there isprovided a semiconductor device characterized by the following features:

[0017] Each of said metal wires at the position of the connectionterminal comprises an upper metal wire and a lower metal wire, with aninterlaminer insulating film being interposed between the substrate andthe lower metal wire; An interterminal anti-short-circuiting patterncomprising conductive island and recess(es) located around the island isprovided at the same position of the upper and lower metal wires; Thesurface of the metal wire except at least a portion of the island butincluding the inside of the recess thereon is covered with a protectiveinsulating film; Contact hole is formed of the uncovered portion withthe protective insulating film on the island; A transparent conductivefilm is deposited on the surface of the protective insulating filmincluding inside the contact hole and the top face of said island.

[0018] According to a further aspect of the present invention, there isprovided a process for preparing a semiconductor device. The processcomprises the following steps:

[0019] depositing a metal film by vacuum deposition or sputtering andremoving partially the metal film to form the predetermined pattern ofthe metal wire;

[0020] forming an interterminal anti-short-circuiting pattern,comprising conductive islands and recess(es) located around the islands,at the position of the connection terminal to be formed;

[0021] depositing a protective insulating film on the surface of themetal wire except at least a portion of the island but including theinside of the recess thereon to provide a contact hole of the uncoveredportion with the protective insulating film on the island; and

[0022] depositing a transparent conductive film on the surface of theprotective insulating film including inside the contact hole and the topface of the island.

[0023] According to a fifth aspect of the present invention, there isprovided a process for preparing a semiconductor device comprising thesteps of:

[0024] depositing a metal film by vacuum deposition or sputtering toform a predetermined pattern of the metal wire;

[0025] forming an interterminal anti-short-circuiting pattern,comprising conductive islands and recess(es) located around the islands,at the position of the connection terminal to be formed;

[0026] depositing a protective insulating film on the surface of themetal wire except at least a portion of the island but including theinside of the recess;

[0027] providing a contact hole of the uncovered portion with theprotective insulating film on the island;

[0028] making a bottomed pool arriving at the recess through theprotective insulating film adjacent to the contact hole; and

[0029] depositing a transparent conductive film on the surface of theprotective insulating film including the inside of the contact hole andthe bottomed pool.

[0030] According to a sixth aspect of the present invention, there isprovided a process for preparing a semiconductor device comprising thesteps of:

[0031] forming an interlaminer insulating film on a glass substrate bysputtering;

[0032] depositing a metal film thereon by vacuum deposition orsputtering;

[0033] etching the metal film so as to form matrix electrodes on thecentral part of the glass plate, at the same time, to form theconnection terminal having an interterminal anti-short-circuitingpattern on the periphery of the glass substrate, wherein the centralpart being to be changed into a display part, the interterminalanti-short-circuiting pattern comprising a conductive island, recess(es)and at least a constricted part which links the island to therecess(es), the connection terminal being coupled with the electrodeformed on the central part;

[0034] forming a protective insulating film thereon by vacuum depositionor sputtering;

[0035] removing by etching partially the protective insulating filmformed on the islands of the connection terminal, and the protectiveinsulating film and the interlaminer insulating film formed on therecess(es);

[0036] depositing a transparent conductive film by vacuum deposition orsputtering; and

[0037] etching the transparent conductive film into the predeterminedshape of the connection terminal.

[0038] According to further aspects of the present invention, any of theaforementioned steps can be combined or eliminated for making up amodified process. Also any of the features aforementioned and those setforth in the dependent claims can be combined or eliminated for makingup a modified semiconductor device.

BRIEF DESCRIPTION OF DRAWINGS

[0039]FIG. 1 is a perspective view of an assembled liquid crystaldisplay panel which is an embodiment of a semiconductor device of thepresent invention.

[0040]FIG. 2 is an enlarged plan showing a connection terminal accordingto a first embodiment of the present invention.

[0041]FIG. 3 is a cross-sectional side view taken in the line A-A ofFIG. 2 showing the first embodiment of the present invention.

[0042]FIG. 4 is a cross-sectional view showing a TFT-forming portion ofan active matrix liquid crystal display device.

[0043] FIGS. 5 (a) to (e) are a cross-sectional side view showing theproduction steps of the connection terminal according to the firstembodiment of the present invention in this order.

[0044]FIG. 6 is an enlarged plan showing an exemplary actual dimensionof an essential part of an interterminal anti-short-circuiting patternin the connection terminal according to the first embodiment of thepresent invention.

[0045]FIG. 7 is a cross-sectional side view showing a connectionterminal of a second embodiment according to the present invention.

[0046] FIGS. 8 (a) to (e) are a cross-sectional side view showing theproduction steps of the connection terminal according to the secondembodiment of the present invention in this order.

[0047]FIG. 9 is a cross-sectional side view showing a connectionterminal of a third embodiment according to the present invention.

[0048] FIGS. 10 (a) to (e) are a cross-sectional side view showing theproduction steps of the connection terminal according to the thirdembodiment of the present invention in this order.

[0049]FIG. 11 is an enlarged plan showing a connection terminal in aconventional liquid crystal display panel.

[0050]FIG. 12 is a cross-sectional side view taken along the line A-A ofFIG. 11 showing an exemplary conventional connection terminal.

PREFERRED EMBODIMENTS OF THE INVENTION

[0051] A liquid crystal display panel, which is one of the preferredembodiments of a semiconductor device of the present invention, and itsproduction process will be explained in reference to the accompanyingdrawings.

[0052] FIGS. 1 to 6 shows the first embodiment of a liquid crystaldisplay device of the present invention. FIG. 1 is a perspective view ofthe assembled panel; FIG. 2, a plan of a connection terminal; and FIG.3, a cross-sectional view taken in the line A-A of FIG. 2. FIG. 4 is across-sectional view which shows a conventional pixel electrode portionhaving a TFTn and which is for assisting in understanding theexplanation regarding the mode for carrying out the invention.

[0053] The constitution of the liquid crystal display panel will be madeclear by the following explanation regarding a production process of thepresent invention so that it will be explained grossly here. As shown inFIG. 1, the liquid crystal display panel has top and bottom glasssubstrates 1 and 2. These substrates are adhered at spaces to each otherwith a sealing resin. A liquid crystal is encapsulated between thesesubstrates to prepare a liquid crystal cell. On a top-substrate-facingside of the bottom glass substrate surface, metal wires constituting apattern of an active matrix display electrode are formed. Each of metalwires has a connection terminal 3 located on the projected portion ofthe bottom glass substrate surface from the top glass substrate. Theseconnection terminals are connected to a connection element such asdriving LSI and the like.

[0054] Next, a process for preparing this liquid crystal display panel,especially its improved connection terminal 3 located outside the topglass substrate 1 will be explained in reference to the attacheddrawings such as FIG. 1 and the like, mainly to FIG. 5 which is aproduction step diagram of cross-sectional views taken in the line A-Aof FIG. 2.

[0055] Referring to FIG. 5 (a), Cr (chromium) of 200 nm in thickness isdeposited at first on the bottom glass substrate 2 by sputtering andthen partially removed to form a pattern of lower metal wires 9. By eachof these metal wires 9, a gate electrode 9 a is formed in a TFT portionshown in FIG. 4.

[0056] Next, a composite film of silicon oxide and silicon nitride filmshaving a thickness of 500 nm in total is deposited on the lower metalwire 9 by plasma CVD (Chemical Vapor Deposition) to form an interlaminarinsulating (passivation) film 10 (FIG. 5 (b)).

[0057] In the TFT portion shown in FIG. 4, amorphous silicon(hereinafter referred to as “a-Si”) is subsequently deposited on theinterlaminar insulating film 10 in the same CVD apparatus, and thendoped to form undoped a-Si film 16 of 200 nm in thickness and grown upn⁺-type a-Si film 17 of 20 nm. Consequently, the n⁺-type a-Si film ispartially removed to form an island pattern of the undoped a-Si film.The interlaminar insulating film 10 located beneath the island patern ofthe undoped a-Si film works as a gate insulating film.

[0058] On the other hand, referring to FIG. 5 (b) and explaining inrespect to the production process of the improved connection terminal 3again, the deposited interlaminar insulating film 10 is partiallyremoved at the predetermined position, wherein the lower metal wire 9 isto be in contact with an upper metal wire 11 which is to be formed inthe next step (cf. FIG. 5 (c)), to form a pattern of a contact hole 10a.

[0059] Referring to FIG. 5 (c) which shows the next step of FIG. 5 (b),an upper metal wire 11 made of Cr is deposited on the interlaminarinsulating film 10 to cover the inside of the contact hole 10 a.Explaining more in detail, Cr of 200 nm is deposited on the interlaminarinsulating film 10 by sputtering to form the upper metal wire 11electrically contacted to the lower metal wire 9 at the position of thecontact hole 10 a.

[0060] By the upper metal wire 11, drain electrode 11 b and sourceelectrode 11 c are formed in the TFT-forming portion of FIG. 4; and adata signal wire 11 a of the active matrix display device, in a displayportion except the TFT-forming portion.

[0061] In the step of FIG. 5 (c), which is essential to the productionprocess of the improved connection terminal according to the presentinvention, the upper metal wire 11 is partially removed to form aninterterminal anti-short-circuiting pattern of recesses 4 and conductiveisland 5. The island 5 is formed beneath a contact hole 12 a (cf. FIG. 5(d)), which is made through a protective insulating film 12 in the nextstep, and surrounded by the recesses 4. As shown in FIG. 2 which is aplan of the terminal, the recesses 4 and the island 5 are linked by aconstricted part 6.

[0062] In the next step of FIG. 5 (d), a silicon nitride film of about200 nm in thickness is deposited on the upper metal wire 11 having theinterterminal anti-short-circuiting pattern of the recesses 4 and theisland 5 by plasma CVD to form a protective insulating film 12. Theprotective insulating film 12 is partially removed to form a contacthole 12 a on the connecting spot of the upper metal wire 11 which willbe connected to a transparent conductive film 13 (cf. FIG. 5 (e)) to beformed in the next step.

[0063] This contact hole 12 a is formed just on the island 5 formed inthe upper metal wire 11 and accordingly, surrounded by the recesses 4.

[0064] In the next step of FIG. 5 (e), a transparent conductive film 13made of ITO having a thickness of 40 nm is formed on the protectiveinsulating film 12 so as to cover the inside of the contact hole 12 aformed through the protective insulating film 12. FIG. 2 is a plan viewof the connection terminal 3 completed through all the steps asmentioned above. It will be understood that a square drawn by a solidline 12 a in FIG. 2 denotes the contact hole formed through theprotective insulating film 12, and that drawn by a broken line 10 a inFIG. 2 denotes the contact hole made through the interlaminar insulatingfilm 10.

[0065] As shown in FIG. 4, which shows the TFT-forming portion, thetransparent conductive film 13 in the display part is changed into apattern of a pixel electrode 13 connected to the source electrode 11 c.

[0066] By way of all the steps as mentioned above, the bottom glasssubstrate 2 having the connection terminal 3 thereon is manufactured.Subsequently, the resultant bottom glass substrate 2 is adhered to thetop glass substrate 1 with a sealing resin 15 in such manner as shown inFIG. 3. Then a liquid crystal 14 is put into the space between the topand bottom glass substrates 1 and 2 to prepare the first embodiment ofthe liquid crystal display panel having plural connection terminals 3located around the top glass substrate 1.

[0067] In the thus prepared first embodiment of the liquid crystaldisplay panel of the present invention, the entire surface of the uppermetal wire 11 except the conductive islands 5 in the interterminalanti-short-circuiting pattern is covered with the protective insulatingfilm 12. Water hardly penetrates this protective insulating film 12 sothat it is scarcely possible to cause corrosion in the area, of theupper metal wire 11, which is covered with the protective insulatingfilm.

[0068] By the way, although the portion of island 5 uncovered with theprotective insulating film 12 is also covered with the transparentconductive film 13, resistance to water penetration of the transparentconductive film 13 is not so high. On this account, it is possible tocause corrosion in the islands 5. However, the corrosion terminates onlyin the island and never propagate to other portion of the upper metalwire 11. Consequently, metal ion leaching out of the connection terminal3 decreases and the shortcircuit occurrence probability due toinnterterminal current leak can be greatly reduced by this anticorrosioneffect as compared with the conventional structure similar to thissemiconductor device of the present invention.

[0069] On the other hand, electrical resistance increases in proportionto the recesses 4 which surround the island 5 and are formed in order toprevent the interterminal short-circuiting of the upper metal wire 11.However, this problem can be solved and overcome by making electricalcontinuity between the upper metal wire 11 and the lower metal wire 9 byway of the contact hole 10 a formed through the interlaminar insulatingfilm 10.

[0070] A LCD was manufactured by using the first embodiment of theliquid crystal display panel of the present invention and its effect wasinvestigated to obtain the following results.

[0071]FIG. 6 shows an exemplary actual dimension of the portion aroundthe island 5 of the upper metal wire 11 formed in the connectionterminal 3. The interterminal pitch of the connection terminal was setto be 70 μm; the width of the terminal, 40 μm. The interterminalanti-short-circuit pattern having 8 spots of islands 5 relative to oneupper metal wire 11 of the connection terminal 3 was formed.

[0072] The terminal of the thus obtained connection terminal 3 wascontaminated intentionally by touching with a finger, and then connectedto a connection element of a driving LSI through an anisotropicconductive film by pressure. The resultant liquid crystal display panelwas actually operated under the conditions of 50° C. and 85% inhumidity. After 240 hours lapsed from starting the operation, the liquidcrystal panel was examined. As a result, with respect to theconventional liquid crystal display panel, interterminalshort-circuiting was observed in the high ratio of 8 to 10 samples. Inthis contrast, no interterminal short-circuiting was observed in thefirst embodiment of the liquid crystal display panel of the presentinvention.

[0073] Next, referring to FIGS. 7 and 8 having one or more ofcross-sectional view taken in the line A-A of FIG. 2, the secondembodiment of the present invention will be explained below. FIG. 7 is aview of the second embodiment of the present invention corresponding tothe cross-sectional structure of the terminal in the first embodiment ofthe present invention shown in FIG. 3. FIG. 8 is a production stepdiagram regarding the terminal structure shown in FIG. 7. TFT productionsteps of the second embodiment of the present invention are the same asthose of the first embodiment of the present invention. Accordingly,explanation concerning the TFT production steps which have been alreadyexplained is omitted here.

[0074] Referring to FIG. 8 (a), Cr of 200 nm in thickness is depositedon the bottom glass substrate 2 at first by sputtering and thenpartially removed to form a pattern of lower metal wires 9.

[0075] Next, referring to FIG. 8 (b), a composite film of silicon oxideand silicon nitride films having a thickness of 500 nm in total isdeposited on the lower metal wire 9 by plasma CVD to form aninterlaminar insulating film 10. Subsequently, this interlaminarinsulating film 10 is partially removed at the predetermined position,wherein the lower metal wire 9 is to be in contact with an upper metalwire 11 which is to be formed in the next step, to form a pattern of acontact hole 10 a. At the same time, the interlaminar insulating film 10around an island pattern to be formed in the upper metal wire 11 isremoved to form pool-recesses 18′.

[0076] Next, in the step of FIG. 8 (c), Cr of 200 nm in thickness isdeposited on the interlaminar insulating film 10 and then partiallyremoved to form a pattern of a upper metal wire 11. This upper metalwire 11 becomes able to electrically connect to the lower metal wire 9through the contact hole 10 a formed in the former step.

[0077] In this stage, there is formed in the upper metal wire 11 aninterterminal anti-short-circuiting pattern, of recesses 4 andconductive islands 5, which are the same with those of the firstembodiment of the present invention.

[0078] Next, as shown in FIG. 8 (d), a silicon nitride film of about 200nm in thickness is deposited on the upper metal wire 11 by plasma CVD toform a protective insulating film 12. Then, the protective insulatingfilm 12 is partially removed (patterned) to form a contact hole 12 a onthe connecting spot of the upper metal wire 11 which will be connectedto a transparent conductive film 13 to be formed in the next step.

[0079] Next, as shown in FIG. 8 (e), a transparent conductive film 13made of ITO having a thickness of 40 nm is formed on the protectiveinsulating film 12 so as to cover the inside of the contact hole 12 a.Pools 18 are produced at the location of the pool-recesses 18′ in FIG.8(b).

[0080] By way of all the steps as mentioned above, the bottom glasssubstrate 2 having the connection terminal 3 thereon is manufactured.Subsequently, the resultant bottom glass substrate 2 is adhered to thetop glass substrate 1 with a sealing resin 15. Then a liquid crystal 14is put into the space between the top and bottom glass substrates 1 and2 to prepare the second embodiment of the liquid crystal display panelhaving plural connection terminals 3 located around the top glasssubstrate 1, as shown in FIG. 7.

[0081] According to the second embodiment of the present invention, dueto the pools 18′ provided in addition to the first embodiment of thepresent invention, corroded metal is captured in the pools 18 and doesnot spread out into the area between terminals. Accordingly, cause ofunacceptable short-circuiting due to interterminal current leak can beeffectively inhibited still more as compared with the first embodimentof the present invention.

[0082] Next, referring to FIGS. 9 and 10 having one or more ofcross-sectional view taken in the line A-A of FIG. 2, the thirdembodiment of the present invention will be explained below. FIG. 9 is aview of the third embodiment of the present invention corresponding tothe cross-sectional structure of the terminal of the first embodiment ofthe present invention shown in FIG. 3. FIG. 10 is a production stepdiagram regarding the terminal structure shown in FIG. 9. TFT productionsteps of the third embodiment of the present invention are the same asthose of the first embodiment of the present invention. Accordingly,explanation concerning the TFT production steps which have been alreadyexplained are omitted here.

[0083] At first, as shown in FIG. 10 (a), Cr of 200 nm in thickness isdeposited on the bottom glass substrate 2 by sputtering and thenpartially removed to form a pattern of lower metal wires 9. During thisperiod of time, in order to produce no unprotected portion uncoveredwith an insulating film to be formed, the lower metal wire 9 is formedto have an innterterminal anti-short-circuiting pattern of recesses 4and islands 5. This innterterminal anti-short-circuiting pattern has thesame shape with that of a upper metal wire 11 to be formed (see FIG. 10(c)) in the later step.

[0084] Next, in the step of FIG. 10 (b), a composite film of siliconoxide and silicon nitride films having a thickness of 500 nm in total isdeposited on the lower metal wire 9 by plasma CVD to form aninterlaminar insulating film 10. Subsequently, this interlaminarinsulating film 10 is partially removed at the predetermined position,wherein the lower metal wire 9 is to be in contact with the upper metalwire 11 to be formed in the next step, to form a pattern of a contacthole 10 a.

[0085] Next, as shown in FIG. 10 (c), Cr of 200 nm is deposited on theinterlaminar insulating film 10 and then partially removed to form apattern of the upper metal wire 11. This upper metal wire 11 isconnected to the lower metal wire at the position of the contact hole 10a. This upper metal wire 11 is formed to have an innterterminalanti-short-circuiting pattern of recesses 4 and islands 5.

[0086] Next, as shown in FIG. 10 (d), a silicon nitride film of about200 nm in thickness is deposited on the upper metal wire 11 by plasmaCVD to form a protective insulating film 12. Then, the protectiveinsulating film 12 is partially removed to form a contact hole 12 a onthe connecting spot of the upper metal wire 11 which will be connectedto a transparent conductive film 13 (see FIG. 10 (e)) to be formed inthe next step. At the same time, the protective insulating film 12 aswell as the interlaminar insulating film 10 around the island 5 formedin the upper metal wire 11 are removed by etching to form pools 18.

[0087] Subsequently, in the step shown in FIG. 10 (e), a transparentconductive film 13 made of ITO having a thickness of 400 is formed andthen removed partially so as to cover the connection terminal 3.

[0088] In such manners as mentioned above, the bottom glass substrate 2is manufactured. The resultant bottom glass substrate 2 is adhered tothe top glass substrate 1 with a sealing resin 15. Then a liquid crystal14 is put into the space between the top and bottom glass substrates 1and 2 to prepare the third embodiment of the liquid crystal displaypanel shown in FIG. 9.

[0089] In the third embodiment of the liquid crystal panel of thepresent invention, the pools 18 are deep as compared with that of thesecond embodiment of the present invention. Consequently, corroded metalis fully captured in the pools 18 and does not spread out into the areabetween terminals. Accordingly, an anti-short-circuiting effect due tointerterminal current leak can be improved further more.

[0090] The preferable first to third embodiments of the presentinvention have been set forth. However, these are to be consideredillustrative and not restrictive. Other embodiments may be possible. Forexample, the lower metal wire 9 and the upper metal wire 11 may be asingle or laminated layer of any of aluminum, molybdenum, tungsten andthe like in place of a single layer of Cr found in the first to thirdembodiments of the present invention. The material of these metal wiresmay be different from each other. The interlaminar insulating film 10and the protective insulating film 12 may also be made of other materialthan that used in each of the embodiments of the present invention asexplained above. Shape and number of the recess 4 and the island 5forming the interterminal anti-short-circuiting pattern is to beconsidered not restrictive.

[0091] The meritorious effect of the present invention are summarized asfollows.

[0092] As mentioned above, a semiconductor device and its productionprocess of the present invention is preferable for applying to an activematrix LCD. In the present invention, the connection terminal of a metalwire has an interterminal anti-short-circuiting pattern including anisland uncovered with a protective insulating film which is effective tointercept infiltration of water. The metal wire of a metal film exceptthe island area is covered with the protective insulating film.Consequently, even though corrosion appears in the island area, thepropagation of corrosion can be intercepted by the recesses locatedaround the island. Moreover, flow of metal eluted from island can alsobe stopped in the recess and never reaches outside. Accordingly, theoccurrence of the interterminal current leak can be effectivelyinhibited.

[0093] Further objects and solutions contained in the present inventionwill become apparent in the entire disclosure including the appendedclaims and drawings.

[0094] It should be noted that modification obvious in the art may bedone without departing the gist and scope of the present invention asdisclosed herein and claimed hereinbelow as appended.

What is claimed is:
 1. A semiconductor device, comprising plural linesof metal wires formed on a substrate each having a connection terminalpositioned at the end of said substrate for connecting to an externaldriving circuit for applying voltage independently to every pixelelectrode: wherein each of said metal wires at the position of saidconnection terminal is provided with an interterminalanti-short-circuiting pattern comprising conductive island andrecess(es) located around said island; wherein the surface of said metalwire except at least a portion of said island but including the insideof said recess(es) thereon are covered with a protective insulatingfilm; wherein a contact hole is formed of the uncovered portion withsaid protective insulating film on said island; and wherein atransparent conductive film is deposited on the surface of saidprotective insulating film and inside said contact hole including thetop face of said island.
 2. The semiconductor device as defined in claim1, wherein said recess is enough to intercept the propagation ofcorrosion originating from said island mounted on said metal wirelocated at the position of said terminal so as not to spread corrosionout of said island.
 3. The semiconductor device as defined in claim 1,which is an active matrix liquid crystal display panel comprising matrixelectrodes, plural pixel electrodes and active switching elementscorresponding one by one to said pixel electrodes, all of which beingconnected to each of said metal electrodes except said connectionterminal end and constituting a display portion on said substrate,wherein said pixel electrodes can be switched correspondingly to thematrix operation of said active switching elements, and liquid crystalis put into the space of the electrode area located between saidsubstrate and another substrate bonded opposing each other.
 4. Thesemiconductor device as defined in claim 3, wherein said activeswitching elements are thin film transistors.
 5. A semiconductor device,comprising plural lines of metal wires formed on a substrate each havinga connection terminal positioned at the end of said substrate forconnecting to an external driving circuit for applying voltageindependently to every pixel electrode: wherein each of said metal wiresat the position of said connection terminal is provided with aninterterminal anti-short-circuiting pattern comprising conductive islandand recess(es) located around said island; wherein the surface of saidmetal wire except at least a portion of said island but including theinside of said recess(es) thereon are covered with a protectiveinsulating film; wherein a contact hole is formed of the uncoveredportion with said protective insulating film on said island; wherein abottomed pool arriving at said recess is provided through saidprotective insulating film adjacent to said contact hole; and wherein atransparent conductive film is deposited on the surface of saidprotective insulating film, including inside of said contact hole andsaid bottomed pool.
 6. The semiconductor device as defined in claim 5,wherein said recess and said bottomed pool are enough to intercept thepropagation of corrosion originating from said island mounted on saidmetal wire located at the position of said terminal so as not to spreadcorrosion out of said island.
 7. The semiconductor device as defined inclaim 5, which is an active matrix liquid crystal display panelcomprising matrix electrodes, plural pixel electrodes and activeswitching elements corresponding one by one to said pixel electrodes,all of which being connected to each of said metal electrodes exceptsaid connection terminal end and constituting a display portion on saidsubstrate, wherein said pixel electrode can be switched correspondinglyto the matrix operation of said active switching elements, and liquidcrystal is put into the space of the electrode area of between saidsubstrate and another substrate bonded opposing each other.
 8. Thesemiconductor device as defined in claim 7, wherein said activeswitching elements are thin film transistors.
 9. A semiconductor device,comprising plural lines of metal wires formed on a substrate each havinga connection terminal positioned at the end of said substrate forconnecting to an external driving circuit for applying voltageindependently to every pixel electrode: wherein each of said metal wiresat the position of said connection terminal comprises an upper metalwire and a lower metal wire, with an interlaminer insulating film beinginterposed between said substrate and said lower metal wire; wherein aninterterminal anti-short-circuiting pattern comprising conductive islandand recess(es) located around said island is provided at the sameposition of said upper and lower metal wires; wherein the surface ofsaid metal wire except at least a portion of said island but includingthe inside of said recess thereon is covered with a protectiveinsulating film; wherein contact hole is formed of the uncovered portionwith said protective insulating film on said island; and wherein atransparent conductive film is deposited on the surface of saidprotective insulating film including inside said contact hole and thetop face of said island.
 10. A process for preparing a semiconductordevice comprising plural lines of metal wires formed on a substrate eachhaving a connection terminal positioned at the end of said substrate forconnecting to an external driving circuit for applying voltageindependently to every pixel electrode, comprising the steps of:depositing a metal film by vacuum deposition or sputtering and removingpartially said metal film to form the predetermined pattern of saidmetal wire; forming an interterminal anti-short-circuiting pattern,comprising conductive islands and recess(es) located around saidislands, at the position of said connection terminal to be formed;depositing a protective insulating film on the surface of said metalwire except at least a portion of said island but including the insideof said recess thereon to provide a contact hole of the uncoveredportion with said protective insulating film on said island; anddepositing a transparent conductive film on the surface of saidprotective insulating film including inside said contact hole and thetop face of said island.
 11. A process for preparing a semiconductordevice comprising plural lines of metal wires formed on a substrate eachhaving a connection terminal positioned at the end of said substrate forconnecting to an external driving circuit for applying voltageindependently to every pixel electrode, comprising the steps of:depositing a metal film by vacuum deposition or sputtering to form apredetermined pattern of said metal wire; forming an interterminalanti-short-circuiting pattern, comprising conductive islands andrecess(es) located around said islands, at the position of saidconnection terminal to be formed; depositing a protective insulatingfilm on the surface of said metal wire except at least a portion of saidisland but including the inside of said recess; providing a contact holeof the uncovered portion with said protective insulating film on saidisland; making a bottomed pool arriving at said recess through saidprotective insulating film adjacent to said contact hole; and depositinga transparent conductive film on the surface of said protectiveinsulating film including the inside of said contact hole and thebottomed pool.
 12. A process for preparing a semiconductor devicecomprising plural lines of metal wires formed on a glass substrate eachhaving a connection terminal positioned at the end of said glasssubstrate for connecting to an external driving circuit for applyingvoltage independently to every pixel electrode, comprising the steps of:forming an interlaminer insulating film on said glass substrate bysputtering; depositing a metal film thereon by vacuum deposition orsputtering; etching said metal film so as to form matrix electrodes onthe central part of said glass plate, at the same time, to form saidconnection terminal having an interterminal anti-short-circuitingpattern on the periphery of said glass substrate, wherein said centralpart being to be changed into a display part, said interterminalanti-short-circuiting pattern comprising a conductive island, recess(es)and at least a constricted part which links said island to saidrecess(es), said connection terminal being coupled with said electrodeformed on said central part; forming a protective insulating filmthereon by vacuum deposition or sputtering; removing by etchingpartially said protective insulating film formed on said islands of saidconnection terminal, and said protective insulating film and saidinterlaminer insulating film formed on said recess(es); depositing atransparent conductive film by vacuum deposition or sputtering; andetching said transparent conductive film into the predetermined shape ofsaid connection terminal.